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RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide

Barradas, NP, Jeynes, C and Jackson, SM (1998) RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 136. pp. 1168-1171.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Barradas, NPUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Jackson, SMUNSPECIFIEDUNSPECIFIED
Date : 1 March 1998
Identification Number : 10.1016/S0168-583X(97)00686-1
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, RBS, simulated annealing, cubic silicon carbide, buried silicon oxide, plural scattering, multiple scattering
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831707

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