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Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling

Nejim, A, Barradas, NP, Jeynes, C, Cristiano, F, Wendler, E, Gartner, K and Sealy, BJ (1998) Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), 1997-08-26 - 1997-08-30, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Nejim, AUNSPECIFIEDUNSPECIFIED
Barradas, NPUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Cristiano, FUNSPECIFIEDUNSPECIFIED
Wendler, EUNSPECIFIEDUNSPECIFIED
Gartner, KUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Date : 1 April 1998
Identification Number : https://doi.org/10.1016/S0168-583X(97)00966-X
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, RBS channelling, Ge and C co-implantation, end-of-range defects, point defects, DENSITY, ENERGY
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831704

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