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Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures

Nejim, A, Jeynes, C, Webb, RP, Cowern, NEB and Patel, CJ (1997) Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures In: Symposium on Defects and Diffusion in Silicon Processing, 1997-04-01 - 1997-04-04, SAN FRANCISCO, CA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Nejim, A
Jeynes, Cc.jeynes@surrey.ac.uk
Webb, RPr.webb@surrey.ac.uk
Cowern, NEB
Patel, CJ
Date : 1 January 1997
Contributors :
ContributionNameEmailORCID
delaRubia, TD
Coffa, S
Stolk, PA
Rafferty, CS
publisherMATERIALS RESEARCH SOCIETY,
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831697

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