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Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD

Toal, SJ, Reehal, HS, Barradas, NP and Jeynes, C (1999) Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD In: Symposium on Surface Processing - Laser, Lamp, Plasma, at the Annual Spring Meeting of the European-Materials-Society (E-MRS 96), 1996-06-16 - 1998-06-19, STRASBOURG, FRANCE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Toal, SJ
Reehal, HS
Barradas, NP
Date : 1 January 1999
DOI : 10.1016/S0169-4332(98)00435-8
Contributors :
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Chemistry, Physical, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Chemistry, Materials Science, Physics, CHEMISTRY, PHYSICAL, MATERIALS SCIENCE, COATINGS & FILMS, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, microcrystalline silicon carbide, solar cells, ECR-CVD, Rutherford backscattering, simulated annealing, CARBIDE FILMS, THIN-FILMS, DEPOSITION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 23 Jan 2020 16:57

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