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The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC

Kozanecki, A, Jeynes, C, Barradas, NP, Sealy, BJ and Jantsch, W (1999) The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC In: 11th International Conference on Ion Beam Modification of Materials (IBMM98), 1998-08-31 - 1998-09-04, ROYAL TROP INST, AMSTERDAM, NETHERLANDS.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Kozanecki, AUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Barradas, NPUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Jantsch, WUNSPECIFIEDUNSPECIFIED
Date : 1 January 1999
Identification Number : 10.1016/S0168-583X(98)00708-3
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, ion implantation, SiC, erbium, recrystallisation, photoluminescence, SILICON-CARBIDE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831693

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