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Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Taylor, JW, Saleh, AS, Rice-Evans, PC, Knights, AP and Jeynes, C (1999) Depth profiling of defects in nitrogen implanted silicon using a slow positron beam In: 8th International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), 1998-09-06 - 1998-09-12, CAPE TOWN, SOUTH AFRICA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Taylor, JWUNSPECIFIEDUNSPECIFIED
Saleh, ASUNSPECIFIEDUNSPECIFIED
Rice-Evans, PCUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Date : 1 August 1999
Identification Number : 10.1016/S0169-4332(99)00196-8
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Chemistry, Physical, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Chemistry, Materials Science, Physics, CHEMISTRY, PHYSICAL, MATERIALS SCIENCE, COATINGS & FILMS, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, slow positron beam, positron annihilation, composite-Gaussian defect, RUTHERFORD BACKSCATTERING, INFRARED-ABSORPTION, IRRADIATED SILICON, SI, ANNIHILATION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831685

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