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SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

Riley, LS, Hall, S, Harris, J, Fernandez, J, Gallas, B, Evans, AGR, Clarke, JF, Humphrey, J, Murray, RT and Jeynes, C (1999) SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation In: 11th Biennial Conference on Insulating Films on Semiconductors, 1999-06-16 - 1999-06-19, KLOSTER BANZ, GERMANY.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Riley, LSUNSPECIFIEDUNSPECIFIED
Hall, SUNSPECIFIEDUNSPECIFIED
Harris, JUNSPECIFIEDUNSPECIFIED
Fernandez, JUNSPECIFIEDUNSPECIFIED
Gallas, BUNSPECIFIEDUNSPECIFIED
Evans, AGRUNSPECIFIEDUNSPECIFIED
Clarke, JFUNSPECIFIEDUNSPECIFIED
Humphrey, JUNSPECIFIEDUNSPECIFIED
Murray, RTUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Date : 1 September 1999
Identification Number : 10.1016/S0167-9317(99)00376-7
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, NANOSCIENCE & NANOTECHNOLOGY, OPTICS, PHYSICS, APPLIED, ELECTRON
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831684

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