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Vacancy-related defects in ion implanted and electron irradiated silicon

Peaker, AR, Evans-Freeman, JH, Kan, PYY, Hawkins, ID, Terry, J, Jeynes, C and Rubaldo, L (2000) Vacancy-related defects in ion implanted and electron irradiated silicon In: Symposium F: Process Induced Defects in Semiconductors at the 1999 Spring Meeting of the European-Materials-Research-Society, 1999-06-01 - 1999-06-04, STRASBOURG, FRANCE.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Peaker, ARUNSPECIFIEDUNSPECIFIED
Evans-Freeman, JHUNSPECIFIEDUNSPECIFIED
Kan, PYYUNSPECIFIEDUNSPECIFIED
Hawkins, IDUNSPECIFIEDUNSPECIFIED
Terry, JUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Rubaldo, LUNSPECIFIEDUNSPECIFIED
Date : 14 February 2000
Identification Number : https://doi.org/10.1016/S0921-5107(99)00364-5
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE SA, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, Laplace deep level transient spectroscopy, vacancy, divacancy, silicon, ion implant, defect
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831679

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