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Accurate RBS measurement of ion implant doses in a silicon

Boudreault, G, Jeynes, C, Wendler, E, Nejim, A, Webb, RP and Watjen, U (2002) Accurate RBS measurement of ion implant doses in a silicon SURFACE AND INTERFACE ANALYSIS, 33 (6). pp. 478-486.

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Item Type: Article
Authors :
NameEmailORCID
Boudreault, GUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Wendler, EUNSPECIFIEDUNSPECIFIED
Nejim, AUNSPECIFIEDUNSPECIFIED
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Watjen, UUNSPECIFIEDUNSPECIFIED
Date : 1 June 2002
Identification Number : https://doi.org/10.1002/sia.1235
Uncontrolled Keywords : Science & Technology, Physical Sciences, Chemistry, Physical, Chemistry, CHEMISTRY, PHYSICAL, Rutherford backscattering spectrometry, ion implantation, dosimetry, standards, silicon energy loss, SURFACE-ANALYSIS, ENERGY-LOSS, SI, BACKSCATTERING, CALIBRATION, SIMULATION, HE-4
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831660

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