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Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon

Gennaro, S, Sealy, BJ, Jeynes, C, Gwilliam, R, Collart, EJH and Licciardello, A (2003) Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Gennaro, SUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Collart, EJHUNSPECIFIEDUNSPECIFIED
Licciardello, AUNSPECIFIEDUNSPECIFIED
Date : 1 January 2003
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDBrown, BUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDAlford, TLUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDNastasi, MUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDVella, MCUNSPECIFIEDUNSPECIFIED
publisherIEEE, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Manufacturing, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, component, ion implantation, dopant activation, ultra-shallow junctions, indium, SI, DIFFUSION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:30
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831645

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