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Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001)

Xu, L, McNally, PJ, Dilliway, GDM, Cowern, NEB, Jeynes, C, Mendoza, E, Ashburn, P and Bagnall, DM (2005) Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001) In: 5th International Conference on Materials for Microelectronics and Nanoengineering, 2004-09-13 - 2004-09-14, Univ Southampton, Southampton, ENGLAND.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Xu, LUNSPECIFIEDUNSPECIFIED
McNally, PJUNSPECIFIEDUNSPECIFIED
Dilliway, GDMUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Mendoza, EUNSPECIFIEDUNSPECIFIED
Ashburn, PUNSPECIFIEDUNSPECIFIED
Bagnall, DMUNSPECIFIEDUNSPECIFIED
Date : 1 July 2005
Identification Number : 10.1007/s10854-005-2320-6
Contributors :
ContributionNameEmailORCID
publisherSPRINGER, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, GROWTH, PHONONS, DOTS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:30
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831641

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