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Phase change memory materials, devices and methods

UNSPECIFIED (2010) Phase change memory materials, devices and methods 1969602 and WO 2007/071922.

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An optical or electronic phase change memory material comprises gallium, a lanthanide, and a chalcogenide including compounds of gallium, lanthanum and sulphur (GLS) as well as other compounds in which there is substitution of sulphur with oxygen, selenium and/or tellurium. Moreover, lanthanum can be substituted with any other lanthanide series element.

Item Type: Patent
Divisions : Surrey research (other units)
Authors :
Hewak, DW
Simpson, RE
Mairaj, AK
Date : 24 March 2010
DOI : 1969602 and WO 2007/071922
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:28
Last Modified : 23 Jan 2020 10:54

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