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Phase change memory materials, devices and methods

UNSPECIFIED (2010) Phase change memory materials, devices and methods 1969602 and WO 2007/071922.

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Abstract

An optical or electronic phase change memory material comprises gallium, a lanthanide, and a chalcogenide including compounds of gallium, lanthanum and sulphur (GLS) as well as other compounds in which there is substitution of sulphur with oxygen, selenium and/or tellurium. Moreover, lanthanum can be substituted with any other lanthanide series element.

Item Type: Patent
Authors :
NameEmailORCID
Curry, RJr.j.curry@surrey.ac.ukUNSPECIFIED
Hewak, DWUNSPECIFIEDUNSPECIFIED
Simpson, REUNSPECIFIEDUNSPECIFIED
Mairaj, AKUNSPECIFIEDUNSPECIFIED
Date : 24 March 2010
Identification Number : 1969602 and WO 2007/071922
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:28
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831478

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