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Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Hamilton, JJUNSPECIFIEDUNSPECIFIED
Collart, EJHUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Gennaro, SUNSPECIFIEDUNSPECIFIED
Bennett, NSUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Kirkby, KJk.kirkby@surrey.ac.ukUNSPECIFIED
Date : 1 January 2006
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDKirkby, KJk.kirkby@surrey.ac.ukUNSPECIFIED
UNSPECIFIEDChivers, DUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDGwilliam, RUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDSmith, AUNSPECIFIEDUNSPECIFIED
publisherAMER INST PHYSICS, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, Condensed Matter, Physics, pre-amorphisation, Silicon-on-Insulator, rapid thermal annealing, dopant activation
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:26
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831361

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