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Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Hamilton, JJ
Collart, EJH
Bersani, M
Giubertoni, D
Gennaro, S
Bennett, NS
Cowern, NEB
Kirkby, KJk.kirkby@surrey.ac.uk
Date : 1 January 2006
Contributors :
ContributionNameEmailORCID
Kirkby, KJk.kirkby@surrey.ac.uk
Chivers, D
Gwilliam, R
Smith, A
publisherAMER INST PHYSICS,
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, Condensed Matter, Physics, pre-amorphisation, Silicon-on-Insulator, rapid thermal annealing, dopant activation
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:26
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831361

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