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Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

Hamilton, JJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D, Kah, M, Cowern, NEB and Kirkby, KJ (2006) Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator In: Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting, 2006-04-18 - 2006-04-19, San Francisco, CA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Hamilton, JJ
Collart, EJH
Colombeau, B
Bersani, M
Giubertoni, D
Kah, M
Cowern, NEB
Kirkby, KJk.kirkby@surrey.ac.uk
Date : 1 January 2006
Contributors :
ContributionNameEmailORCID
Pawlak, BJ
Jones, KS
Felch, SB
Hane, M
publisherMATERIALS RESEARCH SOCIETY,
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:26
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831360

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