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Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

Giubertoni, D, Pepponi, G, Gennaro, S, Bersani, M, Sahiner, MA, Kelty, SP, Doherty, R, Foad, MA, Kah, M, Kirkby, KJ, Woicik, JC and Pianetta, P (2008) Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon JOURNAL OF APPLIED PHYSICS, 104 (10), ARTN 10371.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Pepponi, GUNSPECIFIEDUNSPECIFIED
Gennaro, SUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Sahiner, MAUNSPECIFIEDUNSPECIFIED
Kelty, SPUNSPECIFIEDUNSPECIFIED
Doherty, RUNSPECIFIEDUNSPECIFIED
Foad, MAUNSPECIFIEDUNSPECIFIED
Kah, MUNSPECIFIEDUNSPECIFIED
Kirkby, KJk.kirkby@surrey.ac.ukUNSPECIFIED
Woicik, JCUNSPECIFIEDUNSPECIFIED
Pianetta, PUNSPECIFIEDUNSPECIFIED
Date : 15 November 2008
Identification Number : https://doi.org/10.1063/1.3026706
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, arsenic, carrier density, density functional theory, elemental semiconductors, Hall effect, rapid thermal annealing, secondary ion mass spectra, semiconductor doping, semiconductor thin films, silicon, vacancies (crystal), X-ray absorption spectra, ABSORPTION FINE-STRUCTURE, DOPED SILICON, SI CRYSTALS, CRYSTALLOGRAPHIC POSITION, ENHANCED DIFFUSION, SOLID SOLUBILITY, DEACTIVATION, IMPURITIES, DEFECTS, LASER
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:26
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831355

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