Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment

Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA et al, Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.

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Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Giubertoni, D Pepponi, G Sahiner, MA Kelty, SP Gennaro, S Bersani, M Kah, M Kirkby, KJ k.kirkby@surrey.ac.uk Doherty, R Foad, MA Meirer, F Streli, C Woicik, JC Pianetta, P
Date :	1 January 2010
DOI :	10.1116/1.3242637
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, NANOSCIENCE & NANOTECHNOLOGY, PHYSICS, APPLIED, annealing, arsenic, diffusion, elemental semiconductors, EXAFS, ion implantation, secondary ion mass spectra, semiconductor doping, silicon, IMPLANTED SILICON, DOPED SILICON, DIFFUSION, SI
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:26
Last Modified :	24 Jan 2020 20:50
URI:	http://epubs.surrey.ac.uk/id/eprint/831351

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