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Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment

Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA , Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Giubertoni, D
Pepponi, G
Sahiner, MA
Kelty, SP
Gennaro, S
Bersani, M
Kah, M
Kirkby, KJk.kirkby@surrey.ac.uk
Doherty, R
Foad, MA
Meirer, F
Streli, C
Woicik, JC
Pianetta, P
Date : 1 January 2010
Identification Number : 10.1116/1.3242637
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, NANOSCIENCE & NANOTECHNOLOGY, PHYSICS, APPLIED, annealing, arsenic, diffusion, elemental semiconductors, EXAFS, ion implantation, secondary ion mass spectra, semiconductor doping, silicon, IMPLANTED SILICON, DOPED SILICON, DIFFUSION, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:26
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831351

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