Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
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Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA , Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.
Full text not available from this repository.| Item Type: | Article | |||||||||||||||||||||||||||||||||||||||||||||
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| Date : | 1 January 2010 | |||||||||||||||||||||||||||||||||||||||||||||
| Identification Number : | 10.1116/1.3242637 | |||||||||||||||||||||||||||||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, NANOSCIENCE & NANOTECHNOLOGY, PHYSICS, APPLIED, annealing, arsenic, diffusion, elemental semiconductors, EXAFS, ion implantation, secondary ion mass spectra, semiconductor doping, silicon, IMPLANTED SILICON, DOPED SILICON, DIFFUSION, SI | |||||||||||||||||||||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:26 | |||||||||||||||||||||||||||||||||||||||||||||
| Last Modified : | 17 May 2017 14:56 | |||||||||||||||||||||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/831351 |
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