Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment

Giubertoni, D, Pepponi, G, Sahiner, MA, Kelty, SP, Gennaro, S, Bersani, M, Kah, M, Kirkby, KJ, Doherty, R, Foad, MA, Meirer, F, Streli, C, Woicik, JC and Pianetta, P (2010) Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28 (1). C1B1-C1B5.

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Item Type:	Article
Authors :	Name Email ORCID Giubertoni, D UNSPECIFIED UNSPECIFIED Pepponi, G UNSPECIFIED UNSPECIFIED Sahiner, MA UNSPECIFIED UNSPECIFIED Kelty, SP UNSPECIFIED UNSPECIFIED Gennaro, S UNSPECIFIED UNSPECIFIED Bersani, M UNSPECIFIED UNSPECIFIED Kah, M UNSPECIFIED UNSPECIFIED Kirkby, KJ k.kirkby@surrey.ac.uk UNSPECIFIED Doherty, R UNSPECIFIED UNSPECIFIED Foad, MA UNSPECIFIED UNSPECIFIED Meirer, F UNSPECIFIED UNSPECIFIED Streli, C UNSPECIFIED UNSPECIFIED Woicik, JC UNSPECIFIED UNSPECIFIED Pianetta, P UNSPECIFIED UNSPECIFIED
Date :	1 January 2010
Identification Number :	https://doi.org/10.1116/1.3242637
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, NANOSCIENCE & NANOTECHNOLOGY, PHYSICS, APPLIED, annealing, arsenic, diffusion, elemental semiconductors, EXAFS, ion implantation, secondary ion mass spectra, semiconductor doping, silicon, IMPLANTED SILICON, DOPED SILICON, DIFFUSION, SI
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:26
Last Modified :	17 May 2017 14:56
URI:	http://epubs.surrey.ac.uk/id/eprint/831351

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