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Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films

Zhang, T, Harris, JJ, Clowes, SK, Debnath, M, Bennett, A, Cohen, LF, Lyford, T and Fewster, PF (2005) Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20 (12). pp. 1153-1156.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Zhang, TUNSPECIFIEDUNSPECIFIED
Harris, JJUNSPECIFIEDUNSPECIFIED
Clowes, SKs.clowes@surrey.ac.ukUNSPECIFIED
Debnath, MUNSPECIFIEDUNSPECIFIED
Bennett, AUNSPECIFIEDUNSPECIFIED
Cohen, LFUNSPECIFIEDUNSPECIFIED
Lyford, TUNSPECIFIEDUNSPECIFIED
Fewster, PFUNSPECIFIEDUNSPECIFIED
Date : 1 December 2005
Identification Number : 10.1088/0268-1242/20/12/001
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, CONDENSED MATTER, MOLECULAR-BEAM EPITAXY, SURFACE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:26
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831340

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