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Liquid crystal semiconductors and their application in field effect transistors

McCulloch, I, Genevicius, K, Heeney, M, Shkunov, M, Zhang, W and Kreouzis, T (2006) Liquid crystal semiconductors and their application in field effect transistors SID Conference Record of the International Display Research Conference. pp. 104-107.

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Abstract

Fabrication of display products by low cost printing technologies such as ink jet, gravure offset lithography and flexography requires solution processable semiconductors for the backplane electronics. The products will typically be of lower performance than polysilicon transistors, but comparable to amorphous silicon. A range of prototypes are under development, including rollable electrophoretic displays, AMLCD's, (active matrix liquid crystal displays), and flexible OLED (organic light emitting diode) displays. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes the development of reactive mesogen semiconductors, which can polymerise within mesophase temperatures, "freezing in" the order in crosslinked domains. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed to facilitate charge transport and provide good oxidative stability, were prepared and their liquid crystalline properties evaluated. Both time-of-flight and field effect transistor devices were prepared and their electrical characterisation reported. © 2006 SID.

Item Type: Article
Authors :
NameEmailORCID
McCulloch, IUNSPECIFIEDUNSPECIFIED
Genevicius, KUNSPECIFIEDUNSPECIFIED
Heeney, MUNSPECIFIEDUNSPECIFIED
Shkunov, Mm.shkunov@surrey.ac.ukUNSPECIFIED
Zhang, WUNSPECIFIEDUNSPECIFIED
Kreouzis, TUNSPECIFIEDUNSPECIFIED
Date : 1 December 2006
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:25
Last Modified : 17 May 2017 14:56
URI: http://epubs.surrey.ac.uk/id/eprint/831267

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