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Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

Miloszewski, JM, Wartak, MS, Weetman, P and Hess, O (2009) Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system JOURNAL OF APPLIED PHYSICS, 106 (6), ARTN 06310.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Miloszewski, JMUNSPECIFIEDUNSPECIFIED
Wartak, MSUNSPECIFIEDUNSPECIFIED
Weetman, PUNSPECIFIEDUNSPECIFIED
Hess, Oo.hess@surrey.ac.ukUNSPECIFIED
Date : 15 September 2009
Identification Number : 10.1063/1.3223288
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DIFFERENTIAL GAIN, LASERS, INDEX, DIODE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:19
Last Modified : 17 May 2017 11:19
URI: http://epubs.surrey.ac.uk/id/eprint/830912

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