Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

Miloszewski, JM, Wartak, MS, Weetman, P and Hess, O (2009) Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system JOURNAL OF APPLIED PHYSICS, 106 (6), ARTN 06310.

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Item Type:	Article
Authors :	Name Email ORCID Miloszewski, JM UNSPECIFIED UNSPECIFIED Wartak, MS UNSPECIFIED UNSPECIFIED Weetman, P UNSPECIFIED UNSPECIFIED Hess, O o.hess@surrey.ac.uk UNSPECIFIED
Date :	15 September 2009
Identification Number :	https://doi.org/10.1063/1.3223288
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DIFFERENTIAL GAIN, LASERS, INDEX, DIODE
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:19
Last Modified :	17 May 2017 11:19
URI:	http://epubs.surrey.ac.uk/id/eprint/830912

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