Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system
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Miloszewski, JM, Wartak, MS, Weetman, P and Hess, O (2009) Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system JOURNAL OF APPLIED PHYSICS, 106 (6), ARTN 06310.
Full text not available from this repository.| Item Type: | Article | |||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||
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| Date : | 15 September 2009 | |||||||||||||||
| DOI : | 10.1063/1.3223288 | |||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DIFFERENTIAL GAIN, LASERS, INDEX, DIODE | |||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||
| Date Deposited : | 17 May 2017 11:19 | |||||||||||||||
| Last Modified : | 24 Jan 2020 20:41 | |||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/830912 |
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