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The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

Logan, DF, Jessop, PE, Knights, AP, Gwilliam, RM and Halsall, MP (2008) The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides In: COMMAD 2008, 2008-07-28 - 2008-08-01, Sydney, Australia.

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Abstract

The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm-1, while the intrinsic loss of the waveguides is limited to 2 dBcm-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Logan, DFUNSPECIFIEDUNSPECIFIED
Jessop, PEUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Halsall, MPUNSPECIFIEDUNSPECIFIED
Date : 2008
Identification Number : https://doi.org/10.1109/COMMAD.2008.4802114
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:18
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830844

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