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High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon

Auret, FD, Peaker, AR, Markevich, VP, Dobaczewski, L and Gwilliam, RM (2006) High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon In: 23rd International Conference on Defects in Semiconductors, 2005-07-24 - 2005-07-29, Awaji Isl, JAPAN.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Auret, FDUNSPECIFIEDUNSPECIFIED
Peaker, ARUNSPECIFIEDUNSPECIFIED
Markevich, VPUNSPECIFIEDUNSPECIFIED
Dobaczewski, LUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 1 April 2006
Identification Number : 10.1016/j.physb.2005.12.020
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, Laplace (high-resolution) DLTS, E-centers, silicon, electron irradiation, DEFECTS, SEMICONDUCTORS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:18
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830841

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