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Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

Aboy, M, Pelaz, L, Montserrat, J, Bermudez, FJ and Hamilton, JJ (2007) Boron diffusion and activation in SOI and bulk Si: The role of the buried interface NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 257. pp. 152-156.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Aboy, MUNSPECIFIEDUNSPECIFIED
Pelaz, LUNSPECIFIEDUNSPECIFIED
Montserrat, JUNSPECIFIEDUNSPECIFIED
Bermudez, FJUNSPECIFIEDUNSPECIFIED
Hamilton, JJj.hamilton@surrey.ac.ukUNSPECIFIED
Date : 1 April 2007
Identification Number : https://doi.org/10.1016/j.nimb.2006.12.157
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, modeling, boron, activation, SOI, SILICON-ON-INSULATOR, IMPLANTATION, DISSOLUTION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:16
Last Modified : 17 May 2017 11:16
URI: http://epubs.surrey.ac.uk/id/eprint/830669

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