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Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator AIP Conference Proceedings, 866. pp. 73-75.

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Abstract

Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si. © 2006 American Institute of Physics.

Item Type: Article
Authors :
NameEmailORCID
Hamilton, JJj.hamilton@surrey.ac.ukUNSPECIFIED
Collart, EJHUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Gennaro, SUNSPECIFIEDUNSPECIFIED
Bennett, NSUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Kirkby, KJUNSPECIFIEDUNSPECIFIED
Date : 1 December 2006
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:16
Last Modified : 17 May 2017 11:16
URI: http://epubs.surrey.ac.uk/id/eprint/830666

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