University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

Hamilton, JJ, Colombeau, B, Sharp, JA, Cowern, NEB, Kirkby, KJ, Collart, EJH, Bersani, M and Giubertoni, D (2006) Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24 (1). pp. 442-445.

Full text not available from this repository.

Abstract

P -type ultrashallow junctions are widely fabricated using Ge preamorphization prior to ultralow-energy boron implantation. However, for future technology nodes, issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). An understanding of the effect of the buried Si SiO2 interface on defect evolution, electrical activation, and diffusion is needed in order to optimize the preamorphization technique. In the present study, boron has been implanted in germanium preamorphized silicon and SOI wafers with different preamorphizing implant conditions. Subsequent to implantation an isothermal annealing study of the samples was carried out. Electrical and structural properties were measured by Hall-effect and secondary-ion-mass spectroscopy techniques. The results show a variety of interesting effects. For the case where the Ge preamorphization end-of-range defects are close to the buried oxide interface, there is less dopant deactivation and less transient-enhanced diffusion, due to a lower interstitial gradient towards the surface. © 2006 American Vacuum Society.

Item Type: Article
Authors :
NameEmailORCID
Hamilton, JJj.hamilton@surrey.ac.ukUNSPECIFIED
Colombeau, BUNSPECIFIEDUNSPECIFIED
Sharp, JAUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Kirkby, KJUNSPECIFIEDUNSPECIFIED
Collart, EJHUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Date : 1 January 2006
Identification Number : 10.1116/1.2140004
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 11:15
URI: http://epubs.surrey.ac.uk/id/eprint/830636

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800