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Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Vassilevski, K, Nikitina, I, Horsfall, A, Wright, N, O'Neill, AG, Gwilliam, R and Johnson, CM (2009) Silicon Carbide Static Induction Transistor with Implanted Buried Gate In: 7th European Conference on Silicon Carbide and Related Materials, 2008-09-07 - 2008-09-11, Barcelona, SPAIN.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Vassilevski, K
Nikitina, I
Horsfall, A
Wright, N
O'Neill, AG
Johnson, CM
Date : 1 January 2009
Contributors :
PerezTomas, A
Godignon, P
Vellvehi, M
Brosselard, P
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Materials Science, Ceramics, Materials Science, Multidisciplinary, Engineering, Materials Science, SIT, BGSIT, ion implantation, specific on-resistance, JFET, MOBILITY
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 23 Jan 2020 16:39

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