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Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Silver, M and Thijs, PJA (1998) Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers Conference on Lasers and Electro-Optics Europe - Technical Digest.

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Abstract

Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm and 1.5 μm compressively strained lasers from 90 K to 370 K and the temperature sensitivity parameter, To. In addition, L, the integrated spontaneous emission emanating from the side of the devices was collected. By measuring L at the threshold as a function of temperature, it was verified that the relationship To(IRad)= T holds true even to above room temperature.

Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Phillips, AFUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Silver, MUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 January 1998
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830614

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