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Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1998) Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 61-62.

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Abstract

We investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInAs/InP MQW lasers, and found that compared with GaInAsP/InP devices the higher characteristic temperature was caused by a reduction of the non-radiative recombination current.

Item Type: Article
Authors :
NameEmailORCID
Higashi, TUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Phillips, AFUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Uchida, TUNSPECIFIEDUNSPECIFIED
Fujii, TUNSPECIFIEDUNSPECIFIED
Date : 1 December 1998
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830613

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