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Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP and Thijs, PJA (1998) Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature Conference Digest - IEEE International Semiconductor Laser Conference. pp. 63-64.

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Abstract

We investigated the influence of Auger recombination from 90 K to above room temperature and found its contribution to the threshold current at 300 K to be about 80% and 50% at 1.5 μm and at 1.3 μm respectively.

Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Phillips, AFUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 December 1998
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830612

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