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Effect of auger generated hot-holes on 1.5-μm InGaAs(P)-based quantum well semiconductor lasers

Sweeney, SJ, Adams, AR, O'Reilly, EP, Silver, M and Thijs, PJA (2000) Effect of auger generated hot-holes on 1.5-μm InGaAs(P)-based quantum well semiconductor lasers Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. pp. 391-392.

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Abstract

Using a combination of experimental and theoretical techniques, the direct-CHSH process, that produces hot-holes, was found to be the most important Auger process in 1.5-μm semiconductor lasers. Results of the study clearly highlight the design implications of both quantum well placement and total waveguide thickness on laser performance.

Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Silver, MUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 December 2000
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830610

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