Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum-well lasers using hydrostatic pressure
Jin, SR, Sweeney, SJ, Knowles, G, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum-well lasers using hydrostatic pressure Conference Digest - IEEE International Semiconductor Laser Conference. pp. 83-84.
Full text not available from this repository.Abstract
The recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum well lasers were optically investigated using hydrostatic pressure. The lasing- energy dependence of carrier-recombination in these quantum-well lasers were compared. It was found that the defect-related mono-molecular current at threshold remains nearly constant as a function of lasing energy.
Item Type: | Article | ||||||||||||||||||||||||
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Divisions : | Surrey research (other units) | ||||||||||||||||||||||||
Authors : |
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Date : | 1 January 2002 | ||||||||||||||||||||||||
Depositing User : | Symplectic Elements | ||||||||||||||||||||||||
Date Deposited : | 17 May 2017 11:15 | ||||||||||||||||||||||||
Last Modified : | 24 Jan 2020 20:33 | ||||||||||||||||||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/830609 |
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