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Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum-well lasers using hydrostatic pressure

Jin, SR, Sweeney, SJ, Knowles, G, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum-well lasers using hydrostatic pressure Conference Digest - IEEE International Semiconductor Laser Conference. pp. 83-84.

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Abstract

The recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum well lasers were optically investigated using hydrostatic pressure. The lasing- energy dependence of carrier-recombination in these quantum-well lasers were compared. It was found that the defect-related mono-molecular current at threshold remains nearly constant as a function of lasing energy.

Item Type: Article
Authors :
NameEmailORCID
Jin, SRUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Knowles, GUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Higashi, TUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 January 2002
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830609

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