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A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation

Sweeney, SJ, Jin, SR, Fehse, R, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation Conference Digest - IEEE International Semiconductor Laser Conference. pp. 43-44.

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Abstract

The thermal stabilities of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation were compared. The optical properties and temperature characteristics of GaInNAs quantum-well (QW) lasers were investigated. It was found that defect-related non-radiative recombination made a significant contribution to the total threshold current in the GaInNAs system, while the Auger recombination process made an increasingly significant contribution at higher temperatures.

Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Fehse, RUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Higashi, TUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 January 2002
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830608

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