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Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers

Tomić, S, Fehse, R, Choulis, SA, O'Reilly, EP, Adams, AR, Sweeney, SJ, Andreev, AD, Hosea, TJC and Riechert, H (2002) Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 41-42.

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Abstract

The recombination processes in GaInNAs 1.3 μm lasers were analyzed theoretically and experimentally. The threshold current was determined by measuring the light emitted from the lasers. The variation of threshold current with temperature and pressure the for quantum well devices was also studied.

Item Type: Article
Authors :
NameEmailORCID
Tomić, SUNSPECIFIEDUNSPECIFIED
Fehse, RUNSPECIFIEDUNSPECIFIED
Choulis, SAUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Andreev, ADUNSPECIFIEDUNSPECIFIED
Hosea, TJCUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Date : 1 January 2002
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830607

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