University of Surrey

Test tubes in the lab Research in the ATI Dance Research

The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs)

Knowles, G, Fehse, R, Tomić, S, Sweeney, SJ, Sale, TE, Adams, AR, O'Reilly, EP, Steinle, G and Riechert, H (2002) The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs) Conference Digest - IEEE International Semiconductor Laser Conference. pp. 139-140.

Full text not available from this repository.

Abstract

The temperature and pressure dependence of the threshold current of GaInNAs based vertical-cavity surface-emitting lasers (VCSEL) were studied. The temperature variation of the main recombination processes measured in GaInNAs edge emitting lasers (EEL) was used with the same active regions for calculating the temperature and pressure dependence of the threshold current density of VCSELs. It was shown that the VCSEL has the cavity mode on the low energy side of the gain peak at room temperature by comparing the actual lasing photon energies.

Item Type: Article
Authors :
NameEmailORCID
Knowles, GUNSPECIFIEDUNSPECIFIED
Fehse, RUNSPECIFIEDUNSPECIFIED
Tomić, SUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Sale, TEUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Steinle, GUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Date : 1 January 2002
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830606

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800