Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers

Sweeney, SJ, Lyons, LJ, Lock, D and Adams, AR (2002) Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 161-162.

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Abstract

The high-energy emission from high power lasers was measured and the facet temperature was extracted. Severe heating was observed up to the onset of catastrophic optical damage (COD). The results showed that under high power operation, the laser facet heat-ups to the melting point of GaAs caused the facet to melt.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Sweeney, SJ s.sweeney@surrey.ac.uk Lyons, LJ Lock, D Adams, AR
Date :	1 January 2002
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:15
Last Modified :	24 Jan 2020 20:33
URI:	http://epubs.surrey.ac.uk/id/eprint/830605

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