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The effect of temperature dependent processes on the performance of 1.5-mu m compressively strained InGaAs(P) MQW semiconductor diode lasers

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP and Thijs, PJA (1998) The effect of temperature dependent processes on the performance of 1.5-mu m compressively strained InGaAs(P) MQW semiconductor diode lasers IEEE PHOTONICS TECHNOLOGY LETTERS, 10 (8). pp. 1076-1078.

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Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Phillips, AFUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 August 1998
Identification Number : https://doi.org/10.1109/68.701507
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, OPTICS, PHYSICS, APPLIED, laser thermal factors, optical fiber communication, optical materials/devices, optical measurements, quantum-well lasers, semiconductor lasers, strain, temperature measurement, QUANTUM-WELL LASERS, SENSITIVITY, GAIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830603

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