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Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

Sweeney, SJ, Higashi, T, Adams, AR, Uchida, T and Fujii, T (1998) Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure ELECTRONICS LETTERS, 34 (22). pp. 2130-2132.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Higashi, TUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Uchida, TUNSPECIFIEDUNSPECIFIED
Fujii, TUNSPECIFIEDUNSPECIFIED
Date : 29 October 1998
Identification Number : 10.1049/el:19981461
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830602

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