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Dependence of threshold current on QW position and on pressure in 1.5 mu m InGaAs(P) lasers

Sweeney, SJ, Adams, AR, Silver, M, O'Reilly, EP, Watling, JR, Walker, AB and Thijs, PJA (1999) Dependence of threshold current on QW position and on pressure in 1.5 mu m InGaAs(P) lasers In: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII), 1998-08-09 - 1998-08-13, THESSALONIKI, GREECE.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Silver, MUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Watling, JRUNSPECIFIEDUNSPECIFIED
Walker, ABUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 January 1999
Identification Number : 10.1002/(SICI)1521-3951(199901)211:1<525::AID-PSSB525>3.0.CO;2-W
Contributors :
ContributionNameEmailORCID
publisherWILEY-V C H VERLAG GMBH, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, WELL SEMICONDUCTOR-LASERS, AUGER RECOMBINATION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830601

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