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The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers

Phillips, AF, Sweeney, SJ, Adams, AR and Thijs, PJA (1999) The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers In: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII), 1998-08-09 - 1998-08-13, THESSALONIKI, GREECE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Phillips, AFUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 January 1999
Contributors :
ContributionNameEmailORCID
publisherWILEY-V C H VERLAG GMBH, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, TEMPERATURE-DEPENDENCE, SENSITIVITY
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830600

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