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Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1999) Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 5 (3). pp. 413-419.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Higashi, TUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Phillips, AFUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Uchida, TUNSPECIFIEDUNSPECIFIED
Fujii, TUNSPECIFIEDUNSPECIFIED
Date : 1 May 1999
Identification Number : 10.1109/2944.788399
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, OPTICS, PHYSICS, APPLIED, laser thermal factor, quantum-well laser, semiconductor laser, spontaneous emission, temperature, QUANTUM-WELL LASERS, HIGH DIFFERENTIAL GAIN, LOW-THRESHOLD CURRENT, SEMICONDUCTOR-LASERS, AUGER RECOMBINATION, SENSITIVITY, PERFORMANCE, OPERATION, DIODES, SPEED
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830598

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