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The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers

Phillips, AF, Sweeney, SJ, Adams, AR and Thijs, PJA (1999) The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 5 (3). pp. 401-412.

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Item Type: Article
Authors :
NameEmailORCID
Phillips, AFUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 May 1999
Identification Number : https://doi.org/10.1109/2944.788398
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, OPTICS, PHYSICS, APPLIED, laser thermal factors, optical fiber communication, optical measurement, quantum-well lasers, semiconductor lasers, strain, temperature, temperature measurement, QUANTUM-WELL LASERS, 1.3 MU-M, INTERVALENCE BAND ABSORPTION, DOUBLE-HETEROSTRUCTURE LASERS, THRESHOLD CURRENT-DENSITY, AUGER-RECOMBINATION, CARRIER LEAKAGE, SPONTANEOUS EMISSION, ACTIVE LAYER, DIODE-LASERS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830597

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