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A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure

Sweeney, SJ, Higashi, T, Adams, AR, Uchida, T and Fujii, T (2000) A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure In: XXXVIIth Meeting of the European-High-Pressure-Research-Group (EHPRG), 1999-09-09 - 1999-09-11, UNIV MONTPELLIER, MONTPELLIER, FRANCE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Higashi, TUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Uchida, TUNSPECIFIEDUNSPECIFIED
Fujii, TUNSPECIFIEDUNSPECIFIED
Date : 1 January 2000
Identification Number : https://doi.org/10.1080/08957950008200947
Contributors :
ContributionNameEmailORCID
publisherGORDON BREACH SCI PUBL LTD, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Multidisciplinary, Physics, PHYSICS, MULTIDISCIPLINARY, semiconductor laser, threshold current, temperature sensitivity, pressure, quantum well, AlGaInAs, 1.3-MU-M
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830596

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