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Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure

Fehse, R, Sweeney, SJ, Adams, AR, O'Reilly, EP, Egorov, AY, Riechert, H and Illek, S (2001) Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure ELECTRONICS LETTERS, 37 (2). pp. 92-93.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Fehse, RUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Egorov, AYUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Illek, SUNSPECIFIEDUNSPECIFIED
Date : 18 January 2001
Identification Number : https://doi.org/10.1049/el:20010049
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, TEMPERATURE-DEPENDENCE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830594

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