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Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures

Sweeney, SJ, Knowles, G, Sale, TE and Adams, AR (2001) Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 567-572.

Full text not available from this repository.
Item Type: Article
Divisions : Surrey research (other units)
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.uk
Knowles, G
Sale, TE
Adams, AR
Date : 1 January 2001
DOI : 10.1002/1521-3951(200101)223:2<567::AID-PSSB567>3.0.CO;2-6
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, BAND-STRUCTURE, ALGAINP, DIODE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 24 Jan 2020 20:33
URI: http://epubs.surrey.ac.uk/id/eprint/830590

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