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Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures

Sweeney, SJ, Knowles, G, Sale, TE and Adams, AR (2001) Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 567-572.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Knowles, GUNSPECIFIEDUNSPECIFIED
Sale, TEUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Date : 1 January 2001
Identification Number : https://doi.org/10.1002/1521-3951(200101)223:2<567::AID-PSSB567>3.0.CO;2-6
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, BAND-STRUCTURE, ALGAINP, DIODE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830590

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