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A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers

Fehse, R, Tomic, S, Adams, AR, Sweeney, SJ, O'Reilly, EP, Andreev, A and Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8 (4). pp. 801-810.

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Item Type: Article
Authors :
NameEmailORCID
Fehse, RUNSPECIFIEDUNSPECIFIED
Tomic, SUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Andreev, AUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Date : 1 July 2002
Identification Number : https://doi.org/10.1109/JSTQE.2002.801684
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, OPTICS, PHYSICS, APPLIED, epitaxial growth, gallium alloys, laser thermal factors, optical fiber communication, quantum well lasers, semiconductor defects, semiconductor device measurements, semiconductor device modeling, 1.3 MU-M, TEMPERATURE-DEPENDENCE, THRESHOLD CURRENT, SEMICONDUCTOR-LASERS, ROOM-TEMPERATURE, CARRIER LEAKAGE, GANXAS1-X, HETEROSTRUCTURES, OPTIMIZATION, NITROGEN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830586

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