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Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers

Fehse, R, Adams, AR, Sweeney, SJ, Tomic, S, Reichart, H and Ramakrishnan, A (2003) Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers In: Spring Meeting of the European-Materials-Research-Society (E-MRS), 2002-06-18 - 2002-06-21, STRASBOURG, FRANCE.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Fehse, RUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Tomic, SUNSPECIFIEDUNSPECIFIED
Reichart, HUNSPECIFIEDUNSPECIFIED
Ramakrishnan, AUNSPECIFIEDUNSPECIFIED
Date : 1 March 2003
Identification Number : 10.1016/S0038-1101(02)00403-3
Contributors :
ContributionNameEmailORCID
publisherPERGAMON-ELSEVIER SCIENCE LTD, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, QUANTUM-WELL LASERS, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR-LASERS, ROOM-TEMPERATURE, GAN(X)AS1-X, ALLOYS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:15
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830584

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