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Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 mu m quantum well lasers

Sweeney, SJ, Jin, SR, Tomic, S, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2003) Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 mu m quantum well lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Tomic, SUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Higashi, TUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Thijs, PJAUNSPECIFIEDUNSPECIFIED
Date : 1 February 2003
Identification Number : https://doi.org/10.1002/pssb.200301605
Contributors :
ContributionNameEmailORCID
publisherWILEY-V C H VERLAG GMBH, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, SEMICONDUCTOR-LASERS, TEMPERATURE-DEPENDENCE, AUGER
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:14
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830579

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