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Carrier recombination processes in 1.3 mu m and 1.5 mu m InGaAs(P)-based lasers at cryogenic temperatures and high pressures

Sweeney, SJ, Jin, SR, Ahmad, CN, Adams, AR and Murdin, BN (2004) Carrier recombination processes in 1.3 mu m and 1.5 mu m InGaAs(P)-based lasers at cryogenic temperatures and high pressures In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Jin, SRUNSPECIFIEDUNSPECIFIED
Ahmad, CNUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Murdin, BNUNSPECIFIEDUNSPECIFIED
Date : 1 November 2004
Identification Number : 10.1002/pssb.200405243
Contributors :
ContributionNameEmailORCID
publisherWILEY-V C H VERLAG GMBH, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, SEMICONDUCTOR DIODE-LASERS, QUANTUM-WELL LASERS, AUGER RECOMBINATION, THRESHOLD CURRENT, DEPENDENCE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:14
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830576

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