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Influence of growth temperature on carrier recombination in GaInNAs-based lasers

Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on carrier recombination in GaInNAs-based lasers In: Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS, 2004-05-24 - 2004-05-28, Strasbourg, FRANCE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Fehse, RUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
McConville, DUNSPECIFIEDUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Geelhaar, LUNSPECIFIEDUNSPECIFIED
Date : 1 October 2004
Identification Number : 10.1049/ip-opt:20040886
Contributors :
ContributionNameEmailORCID
publisherINST ENGINEERING TECHNOLOGY-IET, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Telecommunications, Engineering, QUANTUM-WELL LASERS, WAVELENGTH SEMICONDUCTOR-LASERS, LOW-THRESHOLD-CURRENT, SENSITIVITY
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:14
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830574

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