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Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

Yakovlev, EV, Talalaev, RA, Martin, RW, Jeynes, C, Peng, N, Deatcher, CJ and Watson, IM (2006) Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor In: 6th International Conference on Nitride Semiconductors (ICNS-6), 2005-08-28 - 2005-09-02, Bremen, GERMANY.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Yakovlev, EV
Talalaev, RA
Martin, RW
Jeynes, Cc.jeynes@surrey.ac.uk
Peng, Nn.peng@surrey.ac.uk
Deatcher, CJ
Watson, IM
Date : 1 January 2006
Identification Number : 10.1002/pssc.200565182
Contributors :
ContributionNameEmailORCID
Hildebrandt, S
Stutzmann, M
publisherWILEY-VCH, INC,
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Ceramics, Optics, Physics, Condensed Matter, Materials Science, Physics, FILMS, EMITTERS, GROWTH
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:14
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830565

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