Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

Yakovlev, EV, Talalaev, RA, Martin, RW, Jeynes, C, Peng, N, Deatcher, CJ and Watson, IM (2006) Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor In: 6th International Conference on Nitride Semiconductors (ICNS-6), 2005-08-28 - 2005-09-02, Bremen, GERMANY.

Full text not available from this repository.

Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Yakovlev, EV Talalaev, RA Martin, RW Jeynes, C c.jeynes@surrey.ac.uk Peng, N n.peng@surrey.ac.uk Deatcher, CJ Watson, IM
Date :	1 January 2006
Identification Number :	10.1002/pssc.200565182
Contributors :	Contribution Name Email ORCID Hildebrandt, S Stutzmann, M publisher WILEY-VCH, INC,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Materials Science, Ceramics, Optics, Physics, Condensed Matter, Materials Science, Physics, FILMS, EMITTERS, GROWTH
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:14
Last Modified :	17 May 2017 14:55
URI:	http://epubs.surrey.ac.uk/id/eprint/830565

Actions (login required)

View Item

Downloads