University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Bennett, NS, Cowern, NEB, Kheyrandish, H, Paul, S, Lerch, W, Smith, AJ, Gwilliam, R and Sealy, BJ (2008) Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon In: ESSDERC 2008, 2008-09-15 - 2008-09-19, Edinburgh, UK.

Full text not available from this repository.

Abstract

Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 1021cm-3 can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Bennett, NSUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Kheyrandish, HUNSPECIFIEDUNSPECIFIED
Paul, SUNSPECIFIEDUNSPECIFIED
Lerch, WUNSPECIFIEDUNSPECIFIED
Smith, AJa.j.smith@surrey.ac.ukUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Date : 2008
Identification Number : 10.1109/ESSDERC.2008.4681755
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:14
Last Modified : 17 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/830534

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800